DESCRIPTION
The NE8500295 power GaAs FET covers the 3.5 to 8.5 GHz frequency range with three different Class A, 2 W partially matched devices. Each packaged device has an input lumped element matching network.
The NE8500200 is the six-cell recessed gate chip used in the "95" package. The device incorporates a Ti-Al gate structure, SiO2 glassivation and plated heat sink technology.

FEATURES
• CLASS A OPERATION
• HIGH EFFICIENCY: ηADD ≥ 39% TYP
• BROADBAND CAPABILITY
• PACKAGE OPTIONS: Chip Hermetic Package
• PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES
• PROVEN RELIABILITY