General Description
This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in line power loss, and resistance to transients are needed.

FEATUREs
• 10.8 A, 30 V
   RDS(ON) = 12 mW @ VGS = 10 V
   RDS(ON) = 17 mW @ VGS = 4.5 V
• Ultra-low gate charge
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability