General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

FEATUREs
■ 3 A, 20 V. RDS(ON) = 0.06 W @ VGS = 4.5 V RDS(ON) = 0.075 W @ VGS = 2.7 V.
■ Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current capability.