DESCRIPTION
The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications.

FEATURES
• 2.5 V drive available
• Low on-state resistance
   RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A)
   RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25 A)
• Low input capacitance
   Ciss = 145 pF TYP.
• Small and surface mount package (SC-96)
• Built-in gate protection diode