GENERAL DESCRIPTION
   MX25L6439E is 64Mb bits serial Flash memory, which is configured as 8,388,608 x 8 internally. When it is in four I/O mode, the structure becomes 16,777,216 bits x 4. MX25L6439E feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.

FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 67,108,864 x 1 bit structure or 16,777,216 x 4 bits (four I/O mode) structure
• 2048 Equal Sectors with 4K bytes each
   - Any Sector can be erased individually
• 256 Equal Blocks with 32K bytes each
   - Any Block can be erased individually
• 128 Equal Blocks with 64K bytes each
   - Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V

PERFORMANCE
• High Performance
   VCC = 2.7~3.6V
   - Normal read
      - 50MHz
   - Fast read
      - 1 I/O: 104MHz with 8 dummy cycles
      - 4 I/O: Up to 104MHz
      - Configurable dummy cycle number for 4 I/O read operation
   - Fast read (QPI Mode)
      - 4 I/O: 54MHz with 4 dummy cycles
      - 4 I/O: 86MHz with 6 dummy cycles
      - 4 I/O: 104MHz with 8 dummy cycles
   - Fast program time: 0.7ms(typ.) and 3ms(max.)/page (256-byte per page)
   - Byte program time: 12us (typical)
   - 8/16/32/64 byte Wrap-Around Burst Read Mode
   - Fast erase time: 30ms (typ.)/sector (4K-byte per sector) ; 0.25s(typ.) /block (64K-byte per block); 20s(typ.) / chip
• Low Power Consumption
   - Low active read current: 19mA(max.) at 104MHz, 10mA(max.) at 33MHz
   - Low active programming current: 15mA (typ.)
   - Low active sector erase current: 10mA (typ.)
   - Low standby current: 15uA (typ.)
   - Deep Power-down current: 1uA (typ.)
• Typical 100,000 erase/program cycles
• 20 years data retention