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MURB1620CT Hoja de datos - Inchange Semiconductor

MURB1620CT image

Número de pieza
MURB1620CT

componentes Descripción

Other PDF
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PDF
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page
2 Pages

File Size
237.4 kB

Fabricante
Iscsemi
Inchange Semiconductor 

FEATURES
• Guarding for over voltage protection
• Dual rectifier construction,positive center tap
• Metal of silicon rectifier,majority carrier conduction
• Low forward voltage,high efficiency
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation


APPLICATIONS
• Switching power supply
• Power switching circuits

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