MTW32N25E Hoja de datos - ON Semiconductor
Fabricante

ON Semiconductor
Power MOSFET 32 Amps, 250 Volts
N–Channel TO–247
This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
•Avalanche Energy Specified
•Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
•Diode is Characterized for Use in Bridge Circuits
•IDSSand VDS(on)Specified at Elevated Temperature
•Isolated Mounting Hole Reduces Mounting Hardware
Page Link's:
1
2
3
4
5
6
7
8
Número de pieza
componentes Descripción
Ver
Fabricante
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on)= 0.08 OHM
Motorola => Freescale
Power MOSFET 32 Amps, 60 Volts
ON Semiconductor
TMOS POWER FET 5 AMPERES RDS(on) = 3 OHMS 250 VOLTS
Motorola => Freescale
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
Motorola => Freescale
60 Amps, 80 Volts N-CHANNEL POWER MOSFET
Unisonic Technologies
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on)= 0.075 OHM
Motorola => Freescale
TMOS SENSEFET DEVICE 30 AMPERES RDS(on) = 0.065 OHM 80 VOLTS
Motorola => Freescale
HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 0.075 Ohm, ID = 38 A
International Rectifier
HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 0.14 Ohm, ID = 23 A
International Rectifier
-4.0A , -30V , RDS(ON) 80 mΩ P-Channel Enhancement Mode MOSFET
Secos Corporation.