DESCRIPTION
NPN silicon planar epitaxial microwave transistor with internal input prematching cell in a SOT440A metal ceramic package with base connected to flange.

FEATURES
• Input prematching cell allows an
    easier design of circuits
• Diffused emitter ballasting resistors
    providing excellent current sharing
    and withstanding a high VSWR
• Interdigitated structure provides
    high emitter efficiency
• Gold metallization realizes very
    good characteristics stability and
    excellent lifetime
• Multicell geometry gives good
    balance of dissipated power and
    low thermal resistance.

APPLICATIONS
    Common base class C narrowband
    pulsed power amplifiers at 1030 MHz
    for IFF applications.