The RF Line
Microwave Power Transistors

. . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range.

• Designed for Class B or C, Common Base Linear Power Amplifiers
• Specified 28 Volt, 3.0 GHz Characteristics:
   Output Power — 1.0 to 5.0 Watts
   Power Gain — 5.0 to 7.0 dB Min
   Collector Efficiency — 30% Min
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
• Circuit board photomaster available upon request by contacting
   RF Tactical Marketing in Phoenix, AZ.