RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 26 volt base station equipment.

• Typical Two- Tone Performance at 945 MHz, 26 Volts
         Output Power - 30 Watts PEP
         Power Gain - 19 dB
         Efficiency - 41.5%
         IMD ó - 32.5 dBc
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power

Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large- Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.