The RF Sub–Micron MOSFET Line
 RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.

• Typical Two–Tone Performance at 945 MHz, 26 Volts
      Output Power — 30 Watts PEP
      Power Gain — 19 dB
      Efficiency — 41.5%
      IMD — -32.5 dBc
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.