Número de pieza
MRF6522-70
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Freescale Semiconductor
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Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 26 volt base station equipment.
• Specified Performance @ 940 MHz, 26 Volts
Output Power, P1dB — 80 Watts (Typ)
Power Gain @ P1dB — 16 dB (Typ)
Efficiency @ P1dB — 58% (Typ)
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 50 Watts CW Output Power
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
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880 MHz, 200 W, 26 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFET
Freescale Semiconductor
945 MHz, 30 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFET
Freescale Semiconductor
945 MHz, 30 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs
Freescale Semiconductor
945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
Motorola => Freescale
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