DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.

FEATUREs
• Silicon NPN, high Frequency, high breakdown Transistor
• Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
• High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
• High FT - 1400 MHz