Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
• Specified 28 V, 30 MHz characteristics —
Output power = 150 W (PEP)
Minimum gain = 10 dB
Efficiency = 40%
• Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
Número de pieza
componentes Descripción
Ver
Fabricante
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 200/150W, 500MHz, 28V ( Rev : Rev_V! )
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 150W, to 150MHz, 28V
M/A-COM Technology Solutions, Inc.
NPN SILICON RF POWER TRANSISTOR 70W(PEP) - 30MHz
Motorola => Freescale
The RF MOSFET Line 200/150W, 500MHz, 28V
M/A-COM Technology Solutions, Inc.