Número de pieza
MRF373ALR1
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The RF MOSFET Line
RF Power Field Effect Transistors
N- Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power ó 75 Watts
Power Gain ó 18.2 dB
Efficiency ó 60%
• 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large- Signal Impedance Parameters
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
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470- 860 MHz, 75 W, 32 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs
Freescale Semiconductor
470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS
Motorola => Freescale
60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS
Motorola => Freescale
470 MHz, 70 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Freescale Semiconductor
945 MHz, 30 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs
Freescale Semiconductor
2000 MHz, 10 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
Motorola => Freescale
945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
Motorola => Freescale
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