RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications.

• Typical CDMA Performance: 1990 MHz, 26 Volts
   IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
      Output Power — 9 Watts Avg.
      Power Gain — 10 dB
      Adjacent Channel Power —
         885 kHz: -47 dBc @ 30 kHz BW
         1.25 MHz: -55 dBc @ 12.5 kHz BW
         2.25 MHz: -55 dBc @ 1 MHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power

FEATUREs
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.