The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28 volt base station equipment.

• Guaranteed Performance @ 960 MHz, 28 Volts
   Output Power — 120 Watts PEP
   Power Gain — 11 dB
   Efficiency — 30%
   Intermodulation Distortion — –28 dBc
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at all Phase Angles with
    5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW