Número de pieza
MRF158
componentes Descripción
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18 Pages
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865.2 kB
Fabricante
M/A-COM Technology Solutions, Inc.
MRF158(V2) Hoja de datos - M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solutions, Inc.
Designed for wideband large signal amplifier and oscillator applications to 500MHz
N–Channel enhancement mode
• Guaranteed 28 volt, 500 MHz performance
Output power = 2.0 watts
Minimum gain = 16 dB (Min.)
Efficiency = 55% (Typ.)
• Facilitates manual gain control, ALC and modulation techniques
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Excellent thermal stability ideally suited for Class A operation
Número de pieza
componentes Descripción
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Fabricante
The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 200/150W, 500MHz, 28V ( Rev : Rev_V! )
M/A-COM Technology Solutions, Inc.
The RF Line Controlled “Q” Broadband Power Transistor 100W, 30 to 500MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF Line Controlled “Q” Broadband Power Transistor 125W, 30 to 500MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF Line Controlled “Q” Broadband Power Transistor 125W, 30 to 500MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line Controlled “Q” Broadband Power Transistor 80W, 100 to 500MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF Line Controlled “Q” Broadband Power Transistor 80W, 100 to 500MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
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