RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment.

• Specified Performance @ 520 MHz, 12.5 Volts
   Output Power ó 8 Watts
   Power Gain ó 11 dB
   Efficiency ó 55%
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
   520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal
   Impedance Parameters
• Broadband UHF/VHF Demonstration Amplifier
   Information Available Upon Request
• Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
   7 Inch Reel.