Número de pieza
MMBR911L
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New Jersey Semiconductor
MMBR911L Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• High Gain
GNF = 17 dB TYP. @ IC= 10 mA, f = 500 MHz
• Low Noise Figure
NF= 1.7dB TYP. @ f= 500 MHz
• High Current-Gain Bandwidth Product
fT = 6.0 GHz TYP. @ IC= 30 mA
APPLICATIONS
• Designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO’S.
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