Complementary Silicon Power Plastic Transistors

These devices are designed for low voltage, low-power, high-gain audio amplifier applications.

FEATUREs
• Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc
                                                = 45 (Min) @ IC = 2.0 Adc
                                                = 10 (Min) @ IC = 5.0 Adc
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
                                                                                      = 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
• Pb-Free Packages are Available*