MJD31C Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
• DC Current Gain -hFE = 25(Min)@ IC= 1A
• Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min)
• Complement to Type MJD32C
• DPAK for Surface Mount Applications
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
• Designed for use in general purpose amplifier and low speed switching applications.
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon NPN Power Transistors
SavantIC Semiconductor
Silicon NPN Power Transistors
Quanzhou Jinmei Electronic
Silicon NPN Power Transistors
Inchange Semiconductor
Silicon NPN Power Transistors
Inchange Semiconductor
Silicon NPN Power Transistors
Inchange Semiconductor
Silicon NPN Power Transistors
Inchange Semiconductor
Silicon NPN Power Transistors
SavantIC Semiconductor
Silicon NPN Power Transistors
New Jersey Semiconductor
Silicon NPN Power Transistors
Inchange Semiconductor
Silicon NPN Power Transistors
SavantIC Semiconductor