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MJD200T4(2001) Hoja de datos - ON Semiconductor

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MJD200T4

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  2005   lastest PDF  

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ON-Semiconductor
ON Semiconductor 

Complementary Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface Mount Applications
   
. . . designed for low voltage, low–power, high–gain audio amplifier
applications.
   
• Collector–Emitter Sustaining Voltage —
    VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain —
    hFE = 70 (Min) @ IC = 500 mAdc
            = 45 (Min) @ IC = 2 Adc
            = 10 (Min) @ IC = 5 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves
    (No Suffix)
• Straight Lead Version in Plastic Sleeves (“–1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Low Collector–Emitter Saturation Voltage —
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
                    = 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current–Gain — Bandwidth Product —
    fT = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage —
    ICBO = 100 nAdc @ Rated VCB
   

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