MJ11022 Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V (Min.)
• High DC Current Gain-
: hFE= 400(Min.)@IC= 10A
• Low Collector Saturation Voltage-
: VCE (sat)= 1.0V(Max.)@ IC= 5.0A
APPLICATIONS
• Designed for general purpose amplifiers, low frequency
switching and motor control applications.
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componentes Descripción
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Fabricante
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon NPN Darlington Power Transistor
Inchange Semiconductor