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MJ11015 Hoja de datos - Zibo Seno Electronic Engineering Co.,Ltd
Fabricante

Zibo Seno Electronic Engineering Co.,Ltd
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
• High DC Current Gain-
: hFE= 1000(Min.)@IC= -20A
• Low Collector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@ IC= -20A
• Complement to the NPN MJ11016
APPLICATIONS
• Designed for use as output devices in complementary
general purpose amplifier applications.
Número de pieza
componentes Descripción
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Fabricante
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor