RF LDMOS Wideband Integrated Power Amplifier

The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

Final Application
• Typical Two--Tone Performance: VDD = 28 Volts, IDQ1 = 120 mA, IDQ2 =
   90 mA, Pout = 5 Watts Avg., Full Frequency Band (1805--1880 MHz or
   1930--1990 MHz)
      Power Gain — 29 dB
      Power Added Efficiency — 29%
      IMD — --34 dBc

Driver Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 105 mA, IDQ2 =
   95 mA, Pout = 35 dBm, Full Frequency Band (1805--1880 MHz or
   1930--1990 MHz)
      Power Gain — 29 dB
      Spectral Regrowth @ 400 kHz Offset = --67 dBc
      Spectral Regrowth @ 600 kHz Offset = --76 dBc
      EVM — 1.1% rms
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 1990 MHz, 10 Watts CW Output Power
• Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 W CW Pout.

FEATUREs
• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Parameters
• On--Chip Matching (50 Ohm Input, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
• On--Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1500 Units, 16 mm Tape Width, 13 inch Reel.