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MH4S64BBKG-7 Hoja de datos - MITSUBISHI ELECTRIC

MH4S64BBKG image

Número de pieza
MH4S64BBKG-7

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page
55 Pages

File Size
548.8 kB

Fabricante
Mitsubishi
MITSUBISHI ELECTRIC  

DESCRIPTION
The MH4S64BBKG is 4194304 - word by 64-bit Synchronous DRAM module. This consists of four industry standard 4Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.
The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.
This is a socket type - memory modules, suitable for easy interchange or addition of modules.


FEATURES
• Utilizes industry standard 4M x 16 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
• 144-pin (72-pin dual in-line package)
• single 3.3V±0.3V power supply
• Clock frequency 100MHz(max.)
• Fully synchronous operation referenced to clock rising edge
• 4 bank operation controlled by BA0,1(Bank Address)
• /CAS latency- 2/3(programmable)
• Burst length- 1/2/4/8/Full Page(programmable)
• Burst type- sequential / interleave(programmable)
• Column access - random
• Auto precharge / All bank precharge controlled by A10
• Auto refresh and Self refresh
• 4096 refresh cycle /64ms
• LVTTL Interface


APPLICATION
   main memory or graphic memory in computer systems

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