DESCRIPTION
The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 ~ 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
● Internally impedance matched
● High output power
   P1dB = 8 W (TYP.) @ f = 10.7 ~ 11.7GHz
● High linear power gain
   GLP = 7.0 dB (TYP.) @ f = 10.7 ~ 11.7GHz
● High power added efficiency
   ηadd = 26% (TYP.) @ f = 10.7 ~ 11.7GHz

APPLICATION
   For use in 10.7 ~ 11.7 GHz band power amplifiers