Número de pieza
MGF1908A
componentes Descripción
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Fabricante

MITSUBISHI ELECTRIC
DESCRIPTION
The MGF1908A is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. The MGF1908Ais mounted in the Super 12 tape, and is electrically equivalent to MGF1303B.
FEATURES
• Low noise figure
NFmin. = 2.3 dB (MAX.) @ f=12GHz
• High associated gain
Gs = 8.0dB (MIN.) @ f=12GHz
APPLICATION
C to KU band low noise amplifiers