MGF0918A - MITSUBISHI ELECTRIC Hoja de datos

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MGF0918A(2004) Hoja de datos - MITSUBISHI ELECTRIC

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MGF0918A

componentes Descripción

L & S BAND GaAs FET [ SMD non – matched ]

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2011 lastest PDF

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4 Pages

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39 kB

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MITSUBISHI ELECTRIC

DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

FEATURES
● High output power
   Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
● High power gain
   Gp=20dB(TYP.) @f=1.9GHz
● High power added efficiency
   hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm
● Hermetic Package

APPLICATION
● For UHF Band power amplifiers

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