DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
FEATURES
High output power
   Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
High power gain
   Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
High power added efficiency
   P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBm

APPLICATION
For UHF Band power amplifiers

QUALITY
GG

RECOMMENDED BIAS CONDITIONS
Vds=8V
Ids=800mA
Rg=100Ω
Refer to Bias Procedure