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MBRP20060CTG
componentes Descripción
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6 Pages
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ON Semiconductor
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POWERTAP II Switch-mode Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal.
FEATUREs
• Dual Diode Construction − May Be Paralleled for Higher Current Output
• Guardring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• Pb−Free Package is Available*
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SWITCHMODE Ultrafast Power Rectifier POWERTAP II Package ( Rev : 1995 )
Motorola => Freescale
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