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MBR1035CT Hoja de datos - Mospec Semiconductor

MBR1060CT image

Número de pieza
MBR1035CT

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2 Pages

File Size
173.7 kB

Fabricante
Mospec
Mospec Semiconductor 

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.


FEATUREs
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 175℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory

Mecnanical Data
* Case :JEDEC TO-220AB molded plastic body
* Termals:Plated lead,solderable per MIL-STD-750, Method 2026
* Polarity:As marked
* Mounting Torqure: 5 in-lbs. max
* Weight:1.7 g approx.
* High temperature soldering guaranteed 260℃ /10 seconds


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Fabricante
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
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