Features
190W, 53% efficiency, typical RF performance
36V, 24W nominal RF input drive
Designed for ATC radar applications
NPN silicon microwave power transistor
Common base, Class-C configuration
High efficiency inter-digitated geometry
Gold metallization system
Internal input and output pre-matching
Hermetic metal/ceramic package
Número de pieza
componentes Descripción
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Fabricante
Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
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