Description
The MA4AGSW1 is an aluminum-gallium-arsenide, single pole, single throw (SPST), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using a patented hetero-junction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required.

FEATUREs
• Ultra Broad Bandwidth: 50 MHz to 50 GHz
• Functional Bandwidth: 50 MHz to 70 GHz
• 0.3 dB Insertion Loss
• 46 dB Isolation @ 50 GHz
• Low Current Consumption
   -5 V for Low Loss State
   +10 mA for Isolation State
• Unique AlGaAs Hetero-Junction Anode
   Technology
• Silicon Nitride Passivation
• Polymer Scratch Protection
• RoHS* Compliant

APPLICATIONs
• Aerospace & Defense
• ISM