Description
The MA02303GJ is an RF power amplifier based on M/A-COM’s Self-Aligned MSAGâ MESFET Process. This product is designed for use in 2.4 GHz ISM products. For booster applications, it features a low power “bypass” mode and output power control

FEATUREs
• Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS
• Single Positive Supply
• Power Added Efficiency As High As 55 Percent
• IP3 = +43 dBm
• Output Power 26.5 dBm @ 3.3 V
• Output Power 28.5 dBm @ 5.0 V
• 100 Percent Duty Cycle
• 2200 to 2600 MHz Operation
• 8 Pin MSOP Full Downset Plastic Package
• Operates Over Wide Ranges of Supply Voltage
• Self-Aligned MSAG®-Lite MESFET Process