
MITSUBISHI ELECTRIC
DESCRIPTION
M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor integrated circuits perform high-current driving with extremely low input-current supply.
Production lineup has been newly expanded with the addition of 225mil (GP) package.
FEATURES
● Three package configurations (P, FP and GP)
● Pin connection Compatible with M54526P and M54526FP
● High breakdown voltage (BVCEO ≥ 50V)
● High-current driving (IC(max) = 500mA)
● With clamping diodes
● Driving available with PMOS IC output of 8-18V
● Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces