SUMMARY DESCRIPTION
   The M58BW032B/D is a 32Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a DoubleWord basis using a 3.0V to 3.6V VDD supply for the circuit and a VDDQ supply down to 1.6V for the Input and Output buffers.

FEATURES SUMMARY
◾ SUPPLY VOLTAGE
   – VDD = 3.0V to 3.6V for Program, Erase and Read
   – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers
◾ HIGH PERFORMANCE
   – Access Time: 45, 55 and 60ns
   – 75MHz Effective Zero Wait-State Burst Read
   – Synchronous Burst Reads
   – Asynchronous Page Reads
◾ MEMORY ORGANIZATION
   – Eight 64 Kbit small parameter Blocks
   – Four 128Kbit large parameter Blocks (of
      which one is OTP)
   – Sixty-two 512Kbit main Blocks
◾ HARDWARE BLOCK PROTECTION
   – WP pin Lock Program and Erase
   – VPEN signal for Program/Erase Enable
◾ SOFTWARE BLOCK PROTECTION
   – Tuning Protection to Lock Program and
      Erase with 64-bit User Programmable
      Password (M58BW032B version only)
◾ SECURITY
   – 64-bit Unique Device Identifier (UID)
◾ FAST PROGRAMMING
   – Write to Buffer and Program capability
◾ OPTIMIZED FOR FDI DRIVERS
   – Common Flash Interface (CFI)
   – Fast Program/Erase Suspend feature in
      each block
◾ LOW POWER CONSUMPTION
   – 100µA Typical Standby
◾ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code M58BW032xT: 8838h
   – Bottom Device Code M58BW032xB: 8837h
◾ OPERATING TEMPERATURE RANGE
   – Automotive (Grade 3): –40 to 125°C
   – Industrial (Grade 6): –40 to 90°C