The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

• Current Transfer Ratio — 100% Minimum @ Specified Conditions
• Guaranteed Switching Speeds
• Meets or Exceeds All JEDEC Registered Specifications

APPLICATIONs
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• Regulation Feedback Circuits
• Monitor & Detection Circuits
• Solid State Relays