LS830 Hoja de datos - Linear Technology
Fabricante

Linear Technology
FEATURES
ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max.
ULTRA LOW NOISE IG=80fA TYP.
LOW NOISE en=70nV/√Hz TYP.
LOW CAPACITANCE CISS=3pf max.
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Fabricante
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER ( Rev : 2014 )
Linear Technology
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Technology
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Integrated System
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Linear Technology