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LRS1341 image

Número de pieza
LRS1342

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page
24 Pages

File Size
187.7 kB

Fabricante
Sharp
Sharp Electronics 

DESCRIPTION
The LRS1341/LRS1342 is a combination memory organized as 1,048,576 × 16-bit flash memory and 131,072 × 16-bit static RAM in one package.


FEATURES
• Flash Memory and SRAM
• Stacked Die Chip Scale Package
• 72-ball CSP (FBGA072-P-0811) plastic package
• Power supply: 2.7 V to 3.6 V
• Operating temperature: -25°C to +85°C
• Flash Memory
   – Access time (MAX.): 100 ns
   – Operating current (MAX.):
      The current for F-VCC pin
      – Read: 25 mA (tCYCLE = 200 ns)
      – Word write: 17 mA
      – Block erase: 17 mA
   – Deep power down current (the current for
      F-VCC pin): 10 µA (MAX. F-CE ≥ F-VCC - 0.2 V,
      F-RP ≤-0.2 V, F-VPP ≤0.2 V)
   – Optimized array blocking architecture
      – Two 4K-word boot blocks
      – Six 4K-word parameter blocks
      – Thirty-one 32K-word main blocks
      – Top/Bottom boot location versions
   – Extended cycling capability
      – 100,000 block erase cycles
   – Enhanced automated suspend options
      – Word write suspend to read
      – Block erase suspend to word write
      – Block erase suspend to read
• SRAM
   – Access time (MAX.): 85 ns
   – Operating current (MAX.):
      – 45 mA
      – 8 mA (tRC, tWC = 1 µs)
   – Standby current: 45 µA (MAX.)
   – Data retention current: 35 µA (MAX.)

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