
Sharp Electronics
DESCRIPTION
The LRS1341/LRS1342 is a combination memory organized as 1,048,576 × 16-bit flash memory and 131,072 × 16-bit static RAM in one package.
FEATURES
• Flash Memory and SRAM
• Stacked Die Chip Scale Package
• 72-ball CSP (FBGA072-P-0811) plastic package
• Power supply: 2.7 V to 3.6 V
• Operating temperature: -25°C to +85°C
• Flash Memory
– Access time (MAX.): 100 ns
– Operating current (MAX.):
The current for F-VCC pin
– Read: 25 mA (tCYCLE = 200 ns)
– Word write: 17 mA
– Block erase: 17 mA
– Deep power down current (the current for
F-VCC pin): 10 µA (MAX. F-CE ≥ F-VCC - 0.2 V,
F-RP ≤-0.2 V, F-VPP ≤0.2 V)
– Optimized array blocking architecture
– Two 4K-word boot blocks
– Six 4K-word parameter blocks
– Thirty-one 32K-word main blocks
– Top/Bottom boot location versions
– Extended cycling capability
– 100,000 block erase cycles
– Enhanced automated suspend options
– Word write suspend to read
– Block erase suspend to word write
– Block erase suspend to read
• SRAM
– Access time (MAX.): 85 ns
– Operating current (MAX.):
– 45 mA
– 8 mA (tRC, tWC = 1 µs)
– Standby current: 45 µA (MAX.)
– Data retention current: 35 µA (MAX.)