LNA2801L Hoja de datos - Panasonic Corporation
Fabricante

Panasonic Corporation
GaAlAs on GaAs Infrared Light Emitting Diode
For optical control systems
FEATUREs
● High-power output, high-efficiency : Ie = 6 mW/sr (min.)
● Emitted light spectrum suited for silicon photodetectors
● Good radiant power output linearity with respect to input current
● ø3 plastic package
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GaAlAs on GaAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation