GaAs Infrared Light Emitting Diode

For optical control systems

FEATUREs
● High-power output, high-efficiency : PO = 10 mW (typ.)
● Wide directivity, matched for external optical systems : θ = 100 deg.
● Infrared light emission close to monochromatic light :
   λP = 950 nm (typ.)
● Optimum for mesuring instruments and control equipments
   in conbination with silicon photodetectors
● High-speed modulation