DESCRIPTION
The LH28F800BG-L flash memory with Smart Voltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L can operate at VCC = 2.7 V and VPP = 2.7 V. Its low voltage operation capability realizes longer battery life and suits for cellular phone application. Its boot, parameter and main-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for portable terminals and personal computers.

FEATURES
• SmartVoltage technology
   – 2.7 V, 3.3 V or 5 V VCC
   – 2.7 V, 3.3 V, 5 V or 12 V VPP
• High performance read access time
   LH28F800BG-L85
   – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/
      100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)
      LH28F800BG-L12
   – 120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/
      150 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
   – Word write suspend to read
   – Block erase suspend to word write
   – Block erase suspend to read
• Enhanced data protection features
   – Absolute protection with VPP = GND
   – Block erase/word write lockout during  power
      transitions
   – Boot blocks protection except RP# = VHH
• SRAM-compatible write interface
• Optimized array blocking architecture
   – Two 4 k-word boot blocks
   – Six 4 k-word parameter blocks
   – Fifteen 32 k-word main blocks
   – Top or bottom boot location
• Enhanced cycling capability
   – 100 000 block erase cycles
• Low power management
   – Deep power-down mode
   – Automatic power saving mode decreases ICC
   in static mode
• Automated word write and block erase
   – Command user interface
   – Status register
• ETOXTM∗ V nonvolatile flash technology
• Package
   – 44-pin SOP (SOP044-P-0600)