LBAS40BST3G(2018) Hoja de datos - Leshan Radio Company,Ltd
Número de pieza
LBAS40BST3G
Fabricante

Leshan Radio Company,Ltd
FEATURES
● Low forward current
● Guard ring protected
● Low diode capacitance.
● We declare that the material of product compliance with
RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
APPLICATIONS
● Ultra high-speed switching
● Voltage clamping
● Protection circuits.
● Blocking diodes.
Número de pieza
componentes Descripción
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Fabricante
SCHOTTKY BARRIER DIODE SCHOTTKY BARRIER TYPE
Toshiba
Schottky barrier diode
( Rev : RevA )
ROHM Semiconductor
Schottky barrier diode
( Rev : 2010 )
ROHM Semiconductor
Schottky barrier diode
( Rev : 2011 )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevA )
ROHM Semiconductor
Schottky barrier diode
( Rev : Old_V )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevB )
ROHM Semiconductor
Schottky barrier diode
( Rev : Old_V )
ROHM Semiconductor
Schottky barrier diode
( Rev : RevC )
ROHM Semiconductor
Schottky barrier diode
( Rev : 2009 )
ROHM Semiconductor