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K7M323625M-QC75 Hoja de datos - Samsung

DS_K7N323601M image

Número de pieza
K7M323625M-QC75

componentes Descripción

Other PDF
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page
24 Pages

File Size
270.1 kB

Fabricante
Samsung
Samsung 

GENERAL DESCRIPTION
The K7N323601M and K7N321801M are 37,748,736-bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.


FEATURES
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data-contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• 100-TQFP-1420A .
• 165FBGA(11x15 ball aray) with body size of 15mmx17mm.

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