K5A60D Hoja de datos - Toshiba
Fabricante

Toshiba
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON)= 1.2 Ω(typ.)
• High forward transfer admittance: ⎪Yfs⎪= 3.0 S (typ.)
• Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)
• Enhancement-mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)

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Fabricante
Silicon N Channel MOS Type / FET
Toshiba
FET/ Silicon N Channel MOS Type
Toshiba
N Channel MOS TYPE / FET
Toshiba
N-CHANNEL ENHANCEMENT TYPE MOS-FET
Unspecified
Silicon N-channel MOS FET
Panasonic Corporation
Silicon N-Channel MOS FET
Renesas Electronics
Silicon N-Channel MOS FET
Renesas Electronics
Silicon N-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET
New Jersey Semiconductor
Silicon N-Channel MOS FET
Renesas Electronics