K3491-TL-E Hoja de datos - VBsemi Electronics Co.,Ltd
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K3491-TL-E
Fabricante

VBsemi Electronics Co.,Ltd
FEATURES
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Compliant to RoHS directive 2002/95/EC
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Fabricante
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd