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K3236
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K3236(2009) Hoja de datos - Toshiba
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Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 42 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
• Enhancement model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2009 )
Toshiba
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