K1529(1998) Hoja de datos - Toshiba
Fabricante
Toshiba
HIGH-POWER AMPLIFIER APPLICATION
● High Breakdown Voltage : VDSS = 180 V
● High Forward Transfer Admittance : |Yfs| = 4.0 S (Typ.)
● Complementary to 2SJ200
Número de pieza
componentes Descripción
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Fabricante
Field Effect Transistor Silicon N Channel MOS Type
New Jersey Semiconductor
Silicon N Channel MOS Type Field Effect Transistor
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Toshiba
N-channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
Field Effect Transistor Silicon N-Channel MOS Type
Unspecified
Field Effect Transistor Silicon N Channel MOS Type
Toshiba
Field Effect Transistor Silicon N Channel MOS Type
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Toshiba
N channel MOS type silicon field effect transistor ( Rev : V2 )
SANYO -> Panasonic
